Infineon IPA045N10N3G: High-Performance 100V OptiMOS Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon IPA045N10N3G stands out as a premier solution, engineered to meet these demanding requirements. As part of Infineon's esteemed OptiMOS™ 3 power MOSFET family, this 100V N-channel transistor is designed to deliver exceptional switching performance and low power losses, making it an ideal choice for a wide array of high-performance applications.

A key strength of the IPA045N10N3G lies in its ultra-low on-state resistance (RDS(on)) of just 4.5 mΩ maximum. This remarkably low resistance is a cornerstone of its efficiency, as it minimizes conduction losses when the device is fully switched on. This translates directly into reduced heat generation, higher overall system efficiency, and the potential for smaller heatsinks, thereby increasing power density.

Furthermore, the device features outstanding switching characteristics. The low gate charge (Qg) and figure of merit (FOM, RDS(on) Qg) ensure fast switching transitions. This is critical for high-frequency switching power supplies, as it reduces switching losses and allows for higher operating frequencies. Operating at a higher frequency enables the use of smaller passive components like inductors and capacitors, leading to more compact and lighter end-products.

The robust 100V drain-source voltage rating makes the IPA045N10N3G exceptionally versatile. It is perfectly suited for a broad spectrum of applications, including:

High-Efficiency SMPS (Switch-Mode Power Supplies) for servers, telecom, and industrial equipment.

Synchronous Rectification in DC-DC converters, where its low RDS(on) is crucial for maximizing efficiency.

Motor Control and Drives, providing reliable and efficient power management in industrial automation.

Solar Inverters and Energy Storage Systems, contributing to higher energy conversion efficiency.

The component is also designed with robustness in mind, offering a high peak current capability and an avalanche ruggedness that ensures reliable operation even under extreme conditions or voltage transients. Its lead-free (RoHS compliant) and halogen-free package also aligns with modern environmental standards.

ICGOODFIND: The Infineon IPA045N10N3G is a top-tier 100V power MOSFET that sets a high benchmark for performance. Its combination of ultra-low RDS(on), superior switching speed, and high robustness makes it an indispensable component for designers aiming to push the boundaries of efficiency and power density in modern electronic systems.

Keywords: OptiMOS™ 3, Low RDS(on), High-Efficiency, Power Density, Synchronous Rectification.