Infineon IPP023N04NG: A High-Performance OptiMOS Power MOSFET for Efficient Power Conversion
In the relentless pursuit of higher efficiency and power density in modern electronics, the choice of switching components is paramount. The Infineon IPP023N04NG stands out as a benchmark in power MOSFET technology, engineered to meet the rigorous demands of applications from server and telecom power supplies to high-frequency DC-DC converters and motor drives.
As part of Infineon's esteemed OptiMOS™ family, this component is defined by its exceptional balance of low losses and robust performance. Fabricated with an advanced super-junction technology, the IPP023N04NG is optimized for use in low-voltage environments, with a drain-source voltage (V_DS) rating of 40 V. This makes it an ideal candidate for handling challenging secondary-side synchronous rectification and power stage tasks in switch-mode power supplies (SMPS), where every percentage point of efficiency is critical.
The core of its high-performance credentials lies in its industry-leading low figure-of-merit (R_DS(on) Q_G). With an ultra-low on-state resistance (R_DS(on)) of just 2.3 mΩ maximum at 10 V, conduction losses are minimized, allowing for more current handling with reduced heat generation. Simultaneously, its low gate charge (Q_G) ensures exceptionally fast switching speeds, which drastically cuts down switching losses. This combination is the key to achieving higher system efficiency, particularly at high operating frequencies, enabling designers to use smaller magnetics and heatsinks, thereby increasing overall power density.
Housed in a space-saving D²PAK (TO-263) package, the MOSFET offers excellent thermal performance, facilitating efficient heat dissipation away from the silicon die. This robust packaging ensures high reliability under continuous operation in demanding environments. Furthermore, the device is characterized by its high body diode robustness, a critical feature for synchronous rectification, ensuring reliable operation during dead-time periods.
Designers will also appreciate the device's high avalanche ruggedness and its ease of drive, thanks to the low gate charge, which simplifies gate driver design. By integrating the IPP023N04NG, engineers can push the boundaries of their power conversion systems, achieving new levels of efficiency that comply with stringent international energy standards.
ICGOODFIND: The Infineon IPP023N04NG OptiMOS™ power MOSFET sets a high standard for efficiency and performance in power conversion. Its superior blend of ultra-low R_DS(on), minimal switching losses, and excellent thermal characteristics makes it a superior choice for designers aiming to maximize power density and reliability in next-generation computing, industrial, and automotive applications.
Keywords: OptiMOS, Low R_DS(on), High Efficiency, Power Density, Synchronous Rectification.
