Infineon IPD079N06L3G 60V 79A OptiMOS Power MOSFET for Automotive Applications
The relentless drive towards vehicle electrification, advanced driver-assistance systems (ADAS), and sophisticated onboard features demands power semiconductor components of the highest order. These components must deliver exceptional efficiency, unwavering reliability, and robust performance under the most demanding conditions. Addressing these critical needs, Infineon Technologies introduces the IPD079N06L3G, a benchmark OptiMOS Power MOSFET engineered specifically for the rigorous automotive landscape.
This N-channel MOSFET is built on Infineon’s advanced OptiMOS technology, a platform renowned for its low figure-of-merit (RDS(on) x Qg). The standout feature of the IPD079N06L3G is its extremely low typical on-state resistance (RDS(on)) of just 0.79 mΩ at a gate-source voltage of 10 V. This ultra-low resistance is the key to minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for more compact thermal management solutions.
Rated for 60 V drain-source voltage (VDS) and a continuous drain current (ID) of 79 A, this MOSFET is perfectly suited for a wide array of high-current automotive applications. It is an ideal candidate for use in DC-DC converters within 48V mild-hybrid systems, motor control modules for electric power steering (EPS), pumps, and fans, as well as in solid-state relay (SSR) replacements and sophisticated load management systems. Its ability to handle high currents with minimal losses makes it indispensable for improving the overall efficiency and driving range of electric and hybrid vehicles.
Beyond raw performance, the IPD079N06L3G is AEC-Q101 qualified, guaranteeing its compliance with the stringent quality and reliability standards required for automotive electronic components. It is designed to withstand the extreme temperatures, voltage transients, and mechanical vibrations inherent to the automotive environment. The device also features a logic-level gate, enhancing its ease of use by allowing for direct control from microcontrollers without the need for additional level-shifting circuitry.
In summary, the Infineon IPD079N06L3G exemplifies the innovation required to power the next generation of automobiles. By offering a combination of ultra-low losses, high current handling, and proven automotive-grade reliability, it empowers engineers to design systems that are more efficient, more powerful, and more compact.
ICGOOODFIND: The Infineon IPD079N06L3G is a premier automotive-grade Power MOSFET that sets a high standard with its ultra-low 0.79 mΩ RDS(on), significantly boosting efficiency and power density in demanding applications like 48V systems and motor drives, making it a superior choice for next-generation vehicle design.
Keywords: Automotive MOSFET, OptiMOS Technology, Low RDS(on), High Efficiency, AEC-Q101 Qualified.
