Infineon BSZ110N08NS5: A High-Performance 80 V OptiMOS Power MOSFET for Advanced Switching Applications
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies with its OptiMOS™ power MOSFET family. The BSZ110N08NS5 stands out as a prime example, engineered to set new benchmarks in advanced switching applications. This 80 V, N-channel MOSFET is designed to deliver exceptional performance where it matters most: minimizing losses and maximizing thermal stability.
A key strength of the BSZ110N08NS5 lies in its extremely low figure-of-merit (R DS(on) x Q G). With a maximum on-state resistance of just 1.8 mΩ at 10 V and an ultra-low total gate charge, this device achieves an outstanding balance between conduction and switching losses. This characteristic is paramount for high-frequency switching power supplies, enabling designers to push frequencies higher without sacrificing efficiency. The result is the ability to create smaller, more compact power designs with reduced need for heat sinking, directly translating to lower system costs and enhanced power density.
Furthermore, the BSZ110N08NS5 is built for robustness. The 80 V drain-source voltage rating provides a comfortable safety margin in 48 V nominal systems, such as telecommunications and server power supplies, protecting against voltage spikes and transients. The device also features a low intrinsic body diode with excellent reverse recovery characteristics, which is critical for performance in synchronous rectification stages and bridge topologies. This leads to reduced switching noise and lower electromagnetic interference (EMI), simplifying filter design and compliance with stringent regulatory standards.
Housed in a SuperSO8 package, this MOSFET offers a superior thermal resistance compared to standard SO-8 packages. The improved thermal performance ensures that the device can operate reliably under continuous high-current conditions, making it an ideal candidate for demanding applications like industrial motor drives, OR-ing FETs, and high-current DC-DC converters. The package's footprint compatibility also allows for an easy upgrade path from previous generations, offering immediate performance gains without a board redesign.
ICGOOODFIND: The Infineon BSZ110N08NS5 is a superior power MOSFET that excels in high-performance switching scenarios. Its exceptional combination of ultra-low on-resistance, minimal gate charge, and robust thermal performance makes it a top-tier choice for engineers aiming to optimize efficiency, power density, and reliability in modern 48 V power systems.
Keywords: OptiMOS, Low RDS(on), High-Frequency Switching, Synchronous Rectification, Power Density.
