Infineon IPP041N04N: A High-Performance OptiMOS Power MOSFET for Efficient Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, from server SMPS and telecom infrastructure to motor drives and battery management, lies the power MOSFET. The Infineon IPP041N04N stands out as a prime example of innovation in this field, leveraging Infineon's advanced OptiMOS™ technology to deliver exceptional performance.
This device is a N-channel MOSFET characterized by a low 4.1 mΩ maximum on-state resistance (R DS(on)) at a gate voltage of 10 V. This ultra-low resistance is a critical figure of merit, as it directly translates to minimized conduction losses. When a MOSFET is in its on-state, the R DS(on) determines how much electrical energy is wasted as heat. The remarkably low value of the IPP041N04N ensures that more power is delivered to the load, significantly boosting the overall efficiency of the application, especially under high-load conditions.
Furthermore, the IPP041N04N is rated for a 40 V drain-source voltage (V DS), making it an ideal choice for a wide range of industrial and automotive applications, including those utilizing 24 V bus systems. Its performance is enhanced by its low gate charge (Q G) and excellent switching characteristics. The combination of low R DS(on) and low gate charge is paramount for achieving high switching frequencies. Operating at higher frequencies allows designers to use smaller passive components like inductors and capacitors, leading to a substantial reduction in the overall size and weight of the power supply unit, thereby increasing power density.
The part is offered in the robust Infineon’s proprietary SuperSO8 package (PG-TDSON-8). This packaging technology offers superior thermal and electrical performance compared to standard SO-8 packages. Its improved lead frame design and exposed die pad facilitate excellent heat dissipation, allowing the MOSFET to handle high continuous and pulsed currents without overheating. This robust thermal capability ensures high reliability and longevity in demanding environments.
In summary, the IPP041N04N is engineered for performance and reliability, enabling designers to push the boundaries of what is possible in power conversion.
ICGOODFIND: The Infineon IPP041N04N OptiMOS™ power MOSFET is a high-efficiency solution that combines an ultra-low 4.1 mΩ R DS(on) with fast switching speeds and superior thermal performance in a compact package, making it a top-tier choice for designing next-generation, high-power-density conversion systems.
Keywords: OptiMOS Technology, Low R DS(on), High Power Density, Efficient Power Conversion, SuperSO8 Package.
